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| 1. general description the mmic is a single-stage amplifier, offere d in a leadless surface-mount package. it delivers 30 dbm output power at 1 db gain compression and a superior performance up to 2700 mhz. its power saving features includ e simple quiescent current adjustment and logic-level shutdown control to reduce the supply current to 4 ? a. 2. features and benefits ? 400 mhz to 2700 mhz frequency operating range ? integrated active biasing ? external matching allows broad application optimization of the el ectrical performance ? 5 v single supply operation ? power-down ? excellent robustness: ? all pins esd protected (hbm 6 kv; cdm 2 kv) ? withstands mismatch of vswr 50 : 1 through all phases ? withstands electrical over-stress peaks of 7 v on the supply voltage 3. applications in this data sheet two base station applications are described, namely lte at 750 mhz and umts at 2140 mhz. the BGA7130 is also suited for a range of other applications: ? wireless infrastructure (base station, repeater, backhaul systems) ? broadband cpe / moca ? industrial applications ? wlan / ism / rfid ? satellite master antenna tv (smatv) 4. quick reference data BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier rev. 1 ? 9 october 2012 product data sheet hvson8 table 1. quick reference data 4.75 v ? v sup ? 5.25 v; ? 40 ? c ? t case ? +85 ? c; p i < ? 20 dbm; r3 = 523 ? (tolerance 1 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit v sup supply voltage [1] 4.75 - 5.25 v i cc(tot) total supply current [2] 390 450 510 ma 500 ? ? r3 ? 4.7 k ? [2] 50 - 550 ma 500 ? ? r3 ? 4.7 k ? ; pin enable = low [2] -46 ? a
BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 2 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier [1] supply voltage on pins rf_out and v cc . [2] current through pins rf_out and v cc . [3] t case is the temperature at the sol dering point of the exposed die pad. [4] covering downlink frequency range of eutran bands 11, 13, 14 and 17. [5] covering downlink frequency range of eutran bands 1, 4 and 10. 5. design support [1] see http://www.nxp.com/models.html . t case case temperature [3] ? 40 +25 +85 ?c f frequency 400 - 2700 mhz measured at lte-750 mhz (see section 14 ) f frequency [4] 728 748 768 mhz g p power gain 728 mhz ? f ? 768 mhz 17 20 23 db p l(1db) output power at 1 db gain compression 728 mhz ? f ? 768 mhz 27 30.5 - dbm ip3 o output third-order intercept point 728 mhz ? f ? 768 mhz; p l = 19 dbm per tone; tonespacing=1mhz 39 42.5 - dbm measured at umts-2140 mhz (see section 14 ) f frequency [5] 2110 2140 2170 mhz g p power gain 2110 mhz ? f ? 2170 mhz 9 12 15 db p l(1db) output power at 1 db gain compression 2110 mhz ? f ? 2170 mhz 27 30 - dbm ip3 o output third-order intercept point 2110 mhz ? f ? 2170 mhz; p l = 19 dbm per tone; tonespacing=1mhz 40.5 44 - dbm table 1. quick reference data ?continued 4.75 v ? v sup ? 5.25 v; ? 40 ? c ? t case ? +85 ? c; p i < ? 20 dbm; r3 = 523 ? (tolerance 1 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit table 2. available design support download from the BGA7130 product page on http://www.nxp.com . support item available remarks device models for agilent eesof eda ads planned [1] based on mextram device model. device models for awr microwave office no [1] based on mextram device model. device models for ansys ansoft designer no [1] based on mextram device model. spice model planned [1] based on gummel-poon device model. s-parameters yes noise parameters yes customer evaluation kit yes see section 6 and section 14 . gerber files yes gerber files of boards pr ovided with the customer evaluation kit. solder pattern yes BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 3 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier 6. ordering information [1] the customer evaluation ki t contains the following: a) fully populated and matched rf evaluation board b) BGA7130 samples 7. functional diagram table 3. ordering information type number package name description version BGA7130 hvson8 plastic thermal enhance d very thin small outline package; no leads; 8 terminals; body 3 ? 3 ? 0.85 mm sot908-3 om7941/BGA7130lte - customer evaluation kit for BGA7130 in a 750 mhz lte application [1] - om7942/BGA7130wcdma - customer evaluation kit for BGA7130 in a 2140 mhz umts application [1] - fig 1. functional diagram ! BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 4 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier 8. pinning information 8.1 pinning 8.2 pin description [1] this pin can be connected to ground. [2] this pin requires an external dc-blocking capacitor. [3] rf decoupled. [4] the exposed die pad of the sot908-3 also fu nctions as heatsink for the power amplifier. fig 2. pin configuration "#$# %&"'(&%)"**+(,-). / ! *)%0-"&1 -"2)3&%)& "#$# table 4. pin description symbol pin description n.c. 1, 4 not connected [1] rf_out 2, 3 rf output and supply to the amplifier [2] v cc 5 bias supply voltage [3] enable 6 enable rf_in 7 rf input [2] icq_adj 8 quiescent collector current adjustment by an external resistor gnd exposed die pad ground [4] BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 5 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier 9. functional description 9.1 supply current adjustment the supply current can be adjusted by changing the value of biasing resistor r3 which connects pin icq_adj (pin 8) to ground (see figure 1 ). 9.2 enable control the BGA7130 can be powered down using enable pin 6 (enable). in case this control function is not needed the enable pin can be connected to the bias supply voltage pin 5 (v cc ). the current through the enable pin 6 should never exceed 20 ma as this might damage the esd protection circuitr y. this can be avoided either by preventing the voltage on this pin to exceed the supply voltage (v sup ) or by adding a series resistor. 10. limiting values v sup = 5 v; t amb = 25 ? c. fig 3. supply current i cc(tot) as function of biasing r esistor r3; typical values 44 /44 44 44 / 44 444 4 4 4 4 /4 4 567 5*+*7 5*+*7 5*+*7 507 507 507 table 5. enable truth table logic level on pin enable (pin 6) status BGA7130 low powered down high powered on table 6. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v sup supply voltage [1] ? 0.5 +7 v v i(dig) digital input voltage [2] [4] 0v sup v i i(dig) digital input current [3] [4] ? 20 +20 ma i cc(tot) total supply current - 1000 ma BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 6 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier [1] absolute maximum dc voltage on pins rf_out, icq_adj and v cc . [2] absolute maximum dc voltage on pin enable. [3] absolute maximum dc current through pin enable. [4] if v i(dig) exceeds v sup the internal esd protection circuit can be damaged. the pin enable can be connected to v cc in case the enable control function is not used (see section 9.2 ). 11. thermal characteristics 12. static characteristics [1] supply voltage on pins rf_out and v cc . [2] current through pins rf_out and v cc . [3] t case is the temperature at the soldering point of the exposed die pad. [4] on digital input pin enable. p i(rf) rf input power f = 750 mhz; switched - 18 dbm f = 2140 mhz; switched - 25 dbm t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c v esd electrostatic discharge voltage human body model (hbm); according jedec standard 22-a114e -6 kv charged device model (cdm); according jedec standard 22-c101b -2 kv table 6. limiting values ?continued in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit table 7. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case <85 ? c6k/w table 8. static characteristics 4.75 v ? v sup ? 5.25 v; ? 40 ? c ? t case ? +85 ? c; p i < ? 20 dbm; r3 = 523 ? (tolerance 1 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit v sup supply voltage [1] 4.75 - 5.25 v i cc(tot) total supply current [2] 390 450 510 ma 0 ? ? r3 ? 5k ? [2] 30 - 550 ma 0 ? ? r3 ? 5k ? ; pin enable = low [2] -4 6 ? a t case case temperature [3] ? 40 +25 +85 ?c i cc supply current on pin rf_out - 420 - ma on pin v cc -30 - ma on pin enable - - 3 ? a v il low-level input voltage [4] 0- 0.7v v ih high-level input voltage [4] 2.5 - v sup v BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 7 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier 13. dynamic characteristics table 9. dynamic characteristics 4.75 v ? v sup ? 5.25 v; ? 40 ? c ? t case ? 85 ? c; p i < ? 20 dbm; r3 = 523 ? (tolerance 1 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit f frequency 400 - 2700 mhz measured at lte-750 mhz (see section 14 ) f frequency [1] 728 748 768 mhz g p power gain 728 mhz ? f ? 768mhz 172023db 728 mhz ? f ? 768 mhz; pin enable = low - ? 18 - db p l(1db) output power at 1 db gain compression 728 mhz ? f ? 768 mhz 27 30.5 - dbm ip3 o output third-order intercept point 728 mhz ? f ? 768 mhz; p l = 15 dbm per tone; tone spacing = 1 mhz 39 42.5 - dbm evm error vector magnitude e-utra test model (e-tm) 3.1 lte; p l(av) =20dbm -2-% nf noise figure 728 mhz ? f ? 768 mhz - 5 - db rl in input return loss 728 mhz ? f ? 768 mhz - 6 - db 728 mhz ? f ? 768 mhz; pin enable = low - 1 - db rl out output return loss 728 mhz ? f ? 768 mhz - 10 - db 728 mhz ? f ? 768 mhz; pin enable = low - 0.5 - db isl isolation 728 mhz ? f ? 768 mhz - 29 - db 728 mhz ? f ? 768 mhz; pin enable = low - 18 - db t d(pu) power-up delay time after pin en able is switched to logic high; to within 0.1 db of final gain state. -3- ? s t d(pd) power-down delay time after pin enable is switched to logic low; to within 0.1 db of final gain state. -0.5- ? s measured at umts-2140 mhz (see section 14 ) f frequency [2] 2110 2140 2170 mhz g p power gain 2110 mhz ? f ? 2170 mhz 9 12 15 db 2110 mhz ? f ? 2170 mhz; pin enable = low - ? 15 - db p l(1db) output power at 1 db gain compression 2110 mhz ? f ? 2170 mhz 27 30 - dbm ip3 o output third-order intercept point 2110 mhz ? f ? 2170 mhz; p l = 15 dbm per tone; tone spacing = 1 mhz 41 44 - dbm acpr adjacent channel power ratio 2110 mhz ? f ? 2170 mhz [3] - ? 60 - dbc nf noise figure 2110 mhz ? f ? 2170 mhz - 5 - db rl in input return loss 2110 mhz ? f ? 2170 mhz - 6 - db 2110 mhz ? f ? 2170 mhz; pin enable = low - 3 - db rl out output return loss 2110 mhz ? f ? 2170 mhz - 10 - db 2110 mhz ? f ? 2170 mhz; pin enable = low - 1 - db BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 8 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier [1] covering downlink frequency range of eutran bands 11, 13, 14 and 17. [2] covering downlink frequency range of eutran bands 1, 4 and 10. [3] two carrier w-cdma; each carrier according to 3gpp test model 1; 64 dpch; par for composite signal = 7 db; 5 mhz carrier spacin g. 14. application information the BGA7130 can be used for a wide variety of applications. this section describes two example base station applications: lte at 750 mhz and umts at 2140 mhz. it serves as a pre-driver for the high-power amplifier in the base transceiver station (bts), see figure 4 . isl isolation 2110 mhz ? f ? 2170 mhz - 24 - db 2110 mhz ? f ? 2170 mhz; pin enable = low - 15 - db t d(pu) power-up delay time after pin en able is switched to logic high; to within 0.1 db of final gain state. -3- ? s t d(pd) power-down delay time after pin enable is switched to logic low; to within 0.1 db of final gain state. -0.5- ? s table 9. dynamic characteristics ?continued 4.75 v ? v sup ? 5.25 v; ? 40 ? c ? t case ? 85 ? c; p i < ? 20 dbm; r3 = 523 ? (tolerance 1 %); input and output impedances matched to 50 ? (see section 14 ); pin enable = high; unless otherwise specified. symbol parameter conditions min typ max unit fig 4. simplified schematic representation of a base transceiver station (bts) 8 94 4 80-3)% 8 : &**)";&*+% < : : = = 2;(1)3)% &"*)""& : : &"*)""& : -'+1&*+% 8 < > 0-3)% 0-3)% 0-3)% 80-3)% > 0-3)% 0-3)% BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 9 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier the lte 750 mhz circuit described here is matched for the downlink frequency range of band 12, 13, 14 and 17 as defined in the evolved umts terrestrial radio access network (eutran) air interface of long term evolut ion (lte) mobile networks. these bands are used in the united states and are expected to be used in canada in the future. band 12, 13 and 14 are commonly referred to as smh bands. the umts 2140 mhz circuit described here is matched for the downlink frequency range of band 1, 4 and 10 as defined in the evolved umts terrestrial radio access network (eutran) air interface of the universal mobile telecommunications system (umts) mobile networks. 14.1 application board customer evaluation boards are available from nxp (see section 6 ? ordering information ? ). the BGA7130 shall be decoupled and matched as depicted in figure 5 . the ground leads and exposed paddle should be connected directly to the ground plane. enough via holes should be provided to connect top and bottom ground planes in the final application board. sufficient cooling should be provided preventing the temperature of the exposed die pad from exceeding 85 ? c. the lte-750 and umts-2140 application boards differ in input and output matching topology have the same input and output matching topology. table 10. covered lte downlink bands eutran band uplink downlink region xii (12) - smh 698 mhz to 716 mhz 728 mhz to 746 mhz united states, canada xiii (13) - smh 776 mhz to 787 mhz 746 mhz to 757 mhz united states, canada xiv (14) - smh 788 mhz to 798 mhz 758 mhz to 768 mhz united states, canada xvii (17) 704 mhz to 716 mhz 734 mhz to 746 mhz united states, canada table 11. covered umts bands eutran band uplink downlink region i (1) - umts 1920 mhz to 1980 mhz 2110 mhz to 2170 mhz japan, europe, asia iv (4) - aws 1710 mhz to 1755 mhz 2110 mhz to 2155 mhz united states, canada, latin america x (10) - umts 1710 mhz to 1770 mhz 2110 mhz to 2170 mhz uruguay, ecuador, peru BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 10 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier the printed-circuit board (pcb) is a four metal layer substrate board as described in figure 7 . the width and the gap between the strip-line and ground plane are configured such that a 50 ohm transmission line is obtained. see table 12 for list of components. fig 5. application diagram of customer evaluation board for lte-750 application : : / ! ! / ! / see table 12 for list of components. fig 6. application diagram of customer evaluation board for umts-2140 application : : / ! / ! / BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 11 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier fig 7. printed-circuit board (pcb) stack build &"2&"&1+?%+;*-"? =0 ;@4#= 0; 4# 00 /44 4#00(%)()? 4# 00/ =0 ; =0 ; &"2&"&1+??%+;"2 &"&1+?%+;*-"? =0 ;@4#= 0; *a%+;?a,-& &"2&"&1+??%+;"2 fig 8. top view of populated lte-750 printed-circuit board (pcb) : 94 ),#4 < / ! 9 4 +;* -" $$ ') "') "& b1) / ! / / ! / BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 12 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier fig 9. top view of populated lte-2140 printed-circuit board (pcb) : 94 ),#4 < / ! 9 4 +;* -" $$ ') "') "& b1) / ! / / / table 12. list of components see figure 5 for schematics. component description value remarks lte-750 umts-2140 c1, c5 capacitor 47 pf 15 pf c2 capacitor 12 pf 3.3 pf c3 capacitor 47 pf 0.82 pf c4 capacitor 10 pf 2.2 pf c6 capacitor 1 nf 10 nf c7 capacitor 100 nf 1 ? f c8 capacitor 10 ? f10 ? f ic1 BGA7130 - - nxp msl1 micro stripline 10.95 mm 10.95 mm [1] msl2 micro stripline 1.5 mm 11.2 mm [1] msl3 micro stripline 8.0 mm 3.3 mm [1] msl4 micro stripline 6.3 mm 8.6 mm [1] msl5 micro stripline 1.9 mm 10.95 mm [1] msl6 micro stripline 2.0 mm - [1] msl7 micro stripline 10.95 mm - [1] r1 resistor 47 ? - r2 resistor 240 ? 240 ? r3 resistor 523 ? 523 ? BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 13 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier [1] length (l) is specified, width (w) = 1.14 mm and spacing (s) = 0.8 mm. 14.2 characteristics lte-750 r4 resistor 0 ? 0 ? l1 rf choke 68 nh 18 nh l2 inductor 1.5 nh - x1, x2 sma connector - - table 12. list of components ?continued see figure 5 for schematics. component description value remarks lte-750 umts-2140 v sup = 5 v; i cc(tot) = 450 ma; matched for lte-750. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c v sup = 5 v; i cc(tot) = 450 ma; matched for lte-750. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 10. power gain as a function of frequency for lte-750 application; typical values fig 11. isolation as a function of frequency for lte-750 application; typical values 4# 4# 4#! 4# 4#9 # 4 4 4 c5d7 ( ( 527 527 527 5 7 5 7 5 7 57 57 57 57 57 57 4# 4# 4#! 4# 4#9 # 84 8/4 84 84 8 4 c5d7 527 527 527 57 57 57 57 57 57 5 7 5 7 5 7 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 14 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier v sup = 5 v; i cc(tot) = 450 ma; matched for lte-750. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c v sup = 5 v; i cc(tot) = 450 ma; matched for lte-750. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 12. input return loss as a function of frequency for lte-750 application; typical values fig 13. output return loss as a function of frequency for lte-750 application; typical values v sup = 5 v; i cc(tot) = 450 ma; p l = 19 dbm per tone; f = 748 mhz; ? f = 1 mhz; matched for lte-750. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 450 ma; p l = 19 dbm per tone; f = 748 mhz; ? f = 1 mhz; matched for lte-750. (1) v sup = 4.75 v (2) v sup = 5 v (3) v sup = 5.25 v fig 14. output third order intercept point as a function of frequency for lte-750 application; different temperatures; typical values fig 15. output third order in tercept point as a function of frequency for lte-750 application; different supply voltages; typical values 4# 4# 4#! 4# 4#9 # 8 84 8 8 4 8 4 c5d7 e' e' e e' e 527 527 527 5 7 5 7 5 7 57 57 57 57 57 57 4# 4# 4#! 4# 4#9 # 8 84 8 8 4 8 4 c5d7 e' e' e e' e 527 527 527 5 7 5 7 5 7 57 57 57 57 57 57 94 ! 4 !4 !4 !!4 !94 4 /4 / / / // / c5d7 5207 5207 5207 57 57 57 57 57 57 5 7 5 7 5 7 94 ! 4 !4 !4 !!4 !94 4 /4 / / / // / c5d7 5207 5207 5207 57 57 57 57 57 57 5 7 5 7 5 7 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 15 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier v sup = 5 v; i cc(tot) = 450 ma; f = 748 mhz; ? f=1mhz; matched for lte-750. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 450 ma; f = 748 mhz; ? f=1mhz; matched for lte-750. (1) v sup = 4.75 v (2) v sup = 5 v (3) v sup = 5.25 v fig 16. output third order intercept point as a function of output power for lte-750 application; different temperatures; typical values fig 17. output third order in tercept point as a function of output power for lte-750 application; different supply voltages; typical values v sup = 5 v; i cc(tot) = 450 ma; matched for lte-750. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 450 ma; matched for lte-750. (1) v sup = 4.75 v (2) v sup = 5 v (3) v sup = 5.25 v fig 18. output power at 1 db gain compression as a function of frequency for lte-750 application; different temperatur es; typical values fig 19. output power at 1 db gain compression as a function of frequency for lte-750 application; different supply voltages; typical values / 4 /4 / / / // / 520()%*+")7 5207 5207 5207 5 7 5 7 5 7 57 57 57 57 57 57 / 4 /4 / / / // / 520()%*+")7 5207 5207 5207 57 57 57 57 57 57 5 7 5 7 5 7 94 ! 4 !4 !4 !!4 !94 4 9 4 c5d7 5 27 5 27 5 27 527 527 527 57 57 57 57 57 57 5 7 5 7 5 7 94 ! 4 !4 !4 !!4 !94 4 9 4 c5d7 5 27 5 27 5 27 527 527 527 57 57 57 57 57 57 5 7 5 7 5 7 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 16 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier v sup = 5 v; i cc(tot) = 450 ma; matched for lte-750. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 450 ma; matched for lte-750. (1) v sup = 4.75 v (2) v sup = 5 v (3) v sup = 5.25 v fig 20. noise figure as a function of frequency for lte-750 application; different temperatures; typical values fig 21. noise figure as a function of frequency for lte-750 application; different supply voltages; typical values v sup = 5 v; i cc(tot) = 450 ma; matched for lte-750. v sup = 5 v; i cc(tot) = 450 ma; matched for lte-750. fig 22. power-on delay time; typical values fig 23. power-down delay time; typical values 4# 4# 4#! 4# 4#9 4 4 4 c5d7 527 527 527 57 57 57 57 57 57 5 7 5 7 5 7 4# 4# 4#! 4# 4#9 4 4 4 c5d7 527 527 527 57 57 57 57 57 57 5 7 5 7 5 7 8 8 8 4 / 8 8 4 4 4 4 !! 4 *5f'7 52-?7 52-?7 52-?7 57 57 57 5 7 5 7 5 7 507 507 507 52-?7 52-?7 52-?7 5 7 5 7 5 7 8 8 8 4 / 8 8 4 4 4 4 !! 4 *5f'7 52-?7 52-?7 52-?7 57 57 57 5 7 5 7 5 7 507 507 507 52-?7 52-?7 52-?7 5 7 5 7 5 7 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 17 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier 14.3 characteristics umts-2140 v sup = 5 v; i cc(tot) = 450 ma; pin enable = low; matched for lte-750. (1) g p (2) isl v sup = 5 v; i cc(tot) = 450 ma; pin enable = low; matched for lte-750. (1) ? s 11 ? 2 (2) ? s 22 ? 2 fig 24. isolation in power-down mode; typical values fig 25. return loss in power-down mode; typical values 4# 4# 4#! 4# 4#9 # 8 4 84 8/4 84 84 8 4 4 c5d7 ( ( 527 527 527 5 7 5 7 5 7 57 57 57 4# 4# 4#! 4# 4#9 # 8 8 8 8/ 4 c5d7 e' e' e e' e' e e' e e' e 527 527 527 57 57 57 5 7 5 7 5 7 v sup = 5 v; i cc(tot) = 450 ma; matched for umts-2140. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c v sup = 5 v; i cc(tot) = 450 ma; matched for umts-2140. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 26. power gain as a function of frequency for umts-2140 applicatio n; typical values fig 27. isolation as a function of frequency for umts-2140 application; typical values # #9 # # # #/ # 4 4 4 c5d7 ( ( 527 527 527 5 7 5 7 5 7 57 57 57 57 57 57 # #9 # # # #/ # 84 8/4 84 84 8 4 4 c5d7 527 527 527 5 7 5 7 5 7 57 57 57 57 57 57 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 18 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier v sup = 5 v; i cc(tot) = 450 ma; matched for umts-2140. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c v sup = 5 v; i cc(tot) = 450 ma; matched for umts-2140. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c fig 28. input return loss as a function of frequency for umts-2140 applicatio n; typical values fig 29. output return loss as a function of frequency for umts-2140 application; typical values v sup = 5 v; i cc(tot) = 450 ma; p l = 15 dbm per tone; ? f = 1 mhz; matched for umts-2140. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 450 ma; p l = 15 dbm per tone; ? f = 1 mhz; matched for umts-2140. (1) v sup = 4.75 v (2) v sup = 5 v (3) v sup = 5.25 v fig 30. third order intermodulation distortion as a function of frequency for umts-2140 application; different temperatures; typical values fig 31. third order intermodulation distortion as a function of frequency for umts-2140 application; different su pply voltages; typical values # #9 # # # #/ # 8 84 8 8 4 8 4 c5d7 e' e' e e' e 527 527 527 5 7 5 7 5 7 57 57 57 57 57 57 # #9 # # # #/ # 8 84 8 8 4 8 4 c5d7 e' e' e e' e 527 527 527 5 7 5 7 5 7 57 57 57 57 57 57 44 4 /4 4 4 /4 / // / / c5d7 5207 5207 5207 57 57 57 57 57 57 5 7 5 7 5 7 44 4 /4 4 4 /4 / // / / c5d7 5207 5207 5207 57 57 57 57 57 57 5 7 5 7 5 7 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 19 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier v sup = 5 v; i cc(tot) = 450 ma; ? f = 1 mhz; matched for umts-2140. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 450 ma; ? f = 1 mhz; matched for umts-2140. (1) v sup = 4.75 v (2) v sup = 5 v (3) v sup = 5.25 v fig 32. third order intermodulation distortion as a function of output power for umts-2140 application; different temperatures; typical values fig 33. third order intermodulation distortion as a function of output power for umts-2140 application; different supply voltages; typical values v sup = 5 v; i cc(tot) = 450 ma; matched for umts-2140. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 450 ma; matched for umts-2140. (1) v sup = 4.75 v (2) v sup = 5 v (3) v sup = 5.25 v fig 34. output power at 1 db gain compression as a function of frequency for umts-2140 application; different temperatures; typical values fig 35. output power at 1 db gain compression as a function of frequency for umts-2140 application; different su pply voltages; typical values / 4 / /4 / // / / 520()%*+")7 5207 5207 5207 5 7 5 7 5 7 57 57 57 57 57 57 / 4 / /4 / // / / 520()%*+")7 5207 5207 5207 57 57 57 57 57 57 5 7 5 7 5 7 44 4 /4 4 4 9 4 c5d7 5 27 5 27 5 27 527 527 527 57 57 57 57 57 57 5 7 5 7 5 7 44 4 /4 4 4 9 4 c5d7 5 27 5 27 5 27 527 527 527 57 57 57 57 57 57 5 7 5 7 5 7 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 20 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier v sup = 5 v; i cc(tot) = 450 ma; matched for umts-2140. (1) t amb = ? 40 ? c (2) t amb = +25 ? c (3) t amb = +85 ? c t amb = 25 ? c; i cc(tot) = 450 ma; matched for umts-2140. (1) v sup = 4.75 v (2) v sup = 5 v (3) v sup = 5.25 v fig 36. noise figure as a function of frequency for umts-2140 application; different temperatures; typical values fig 37. noise figure as a function of frequency for umts-2140 application; different supply voltages; typical values v sup = 5 v; i cc(tot) = 450 ma; matched for umts-2140. v sup = 5 v; i cc(tot) = 450 ma; matched for umts-2140. fig 38. power-on delay time; typical values fig 39. power-down delay time; typical values #9 #4 # # # 4 / c5d7 527 527 527 57 57 57 57 57 57 5 7 5 7 5 7 #9 #4 # # # 4 / c5d7 527 527 527 57 57 57 57 57 57 5 7 5 7 5 7 8 8 8 4 / 8 8 4 4 4 4 !! 4 *5f'7 52-?7 52-?7 52-?7 57 57 57 5 7 5 7 5 7 507 507 507 52-?7 52-?7 52-?7 5 7 5 7 5 7 8 8 8 4 / 8 8 4 4 4 4 !! 4 *5f'7 52-?7 52-?7 52-?7 57 57 57 5 7 5 7 5 7 507 507 507 52-?7 52-?7 52-?7 5 7 5 7 5 7 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 21 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier v sup = 5 v; i cc(tot) = 450 ma; pin enable = low; matched for umts-2140. (1) g p (2) isl v sup = 5 v; i cc(tot) = 450 ma; pin enable = low; matched for umts-2140. (1) ? s 11 ? 2 (2) ? s 22 ? 2 fig 40. isolation in power-down mode; typical values fig 41. return loss in power-down mode; typical values # #9 # # # #/ # 8 4 84 8/4 84 84 8 4 4 c5d7 ( ( 527 527 527 5 7 5 7 5 7 57 57 57 # #9 # # # #/ # 8 8 8 8/ 4 c5d7 e' e' e e' e' e e' e e' e 527 527 527 57 57 57 5 7 5 7 5 7 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 22 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier 15. package outline fig 42. package outline sot908-3 (hvson8) references outline version european projection issue date iec jedec jeita sot908-3 - - - mo-229 - - - sot908-3_po 11-12-18 12-06-18 unit mm max nom min 1.00 0.85 0.80 0.05 0.03 0.00 0.2 3.1 3.0 2.9 2.45 2.40 2.35 3.1 3.0 2.9 0.5 1.5 0.45 0.40 0.35 0.1 a (1) dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.075 mm maximum per side are not included. hvson8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm sot908-3 a 1 b 0.30 0.25 0.20 cd (1) d h e (1) e h 1.75 1.70 1.65 ee 1 k 0.30 0.25 0.20 lv 0.1 w 0.05 y 0.05 y 1 0 1 2 mm scale terminal 1 index area b a d e x c y c y 1 detail x c a a 1 b e 1 e ac b v w terminal 1 index area d h e h l k 1 4 85 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 23 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier 16. soldering fig 43. reflow soldering footprint -"00 ! " #$ g g 3 g 3 g 3 g #/ # 4# 4# 4# #/ # # 4# # # g #! " 3 " g +$$;(-)2&%)& '+12)%1&"2(1;''+12)%(&'*) '+12)%1&"2 '+12)%(&'*)2)(+'-* '';)2&*) 84!84 84!8 g g 3 3 g g g g " 3 " g 3 BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 24 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier 17. abbreviations 18. revision history table 13. abbreviations acronym description cdm charged device model cpe customer-premises equipment esd electrostatic discharge e-utra evolved universal terrestrial radio access eutran evolved umts terrestrial radio access network hbm human body model ism industrial, scientific and medical lte long term evolution mmic monolithic microwave integrated circuit moca multimedia over coax alliance par peak-to-average power ratio rfid radio frequency identification sma sub-miniature version a umts universal mobile telecommunications system vswr voltage standing-wave ratio w-cdma wideband code division multiple access wlan wireless local area network table 14. revision history document id release date data sheet status change notice supersedes BGA7130 v.1 20121009 product data sheet - - BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 25 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier 19. legal information 19.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 19.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 19.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. BGA7130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 9 october 2012 26 of 27 nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 19.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 20. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com nxp semiconductors BGA7130 400 mhz to 2700 mhz 1 w high linearity silicon amplifier ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 9 october 2012 document identifier: BGA7130 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 21. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . 1 5 design support . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . 3 7 functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 8 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 8.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 9 functional description . . . . . . . . . . . . . . . . . . . 5 9.1 supply current adjustment . . . . . . . . . . . . . . . . 5 9.2 enable control. . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 thermal characteristics . . . . . . . . . . . . . . . . . . 6 12 static characteristics. . . . . . . . . . . . . . . . . . . . . 6 13 dynamic characteristics . . . . . . . . . . . . . . . . . . 7 14 application information. . . . . . . . . . . . . . . . . . . 8 14.1 application board . . . . . . . . . . . . . . . . . . . . . . . 9 14.2 characteristics lte-750 . . . . . . . . . . . . . . . . . 13 14.3 characteristics umts-2140 . . . . . . . . . . . . . . 17 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 22 16 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 17 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24 18 revision history . . . . . . . . . . . . . . . . . . . . . . . . 24 19 legal information. . . . . . . . . . . . . . . . . . . . . . . 25 19.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 25 19.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 19.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 19.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26 20 contact information. . . . . . . . . . . . . . . . . . . . . 26 21 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 |
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